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The circuit consumes a high quiescent current, and is relatively inefficient; 'efficiency' is the ratio of AC power feeding into the load, compared with the DC power consumed by the circuit, and at maximum output power is typically about 40%, falling to 4% at one tenth of maximum output, etc. Figure 2 shows an example of a low-power (up to a few dozen milliwatts) high-gain general-purpose class-A amplifier that draws a quiescent current of about 20 mA and is suitable for driving a medium impedance (greater than 65Ω) loudspeaker or headset. Q1 and Q2 are wired as direct-coupled common-emitter amplifiers, and give an overall voltage gain of about 80 dB. Q1's base bias is derived (via R2) from Q2's emitter, which is decoupled via C3 and thus 'follows' the mean collector voltage of Q1. The bias is thus stabilized by DC negative feedback. Input pot RV1 acts as the circuit's volume control. A basic class-B amplifier consists of a pair of transistors, driven in anti-phase but driving a common output load, as shown in Figure 3(a) . In this particular design, Q1 and Q2 are wired in the common-emitter mode and drive the loudspeaker via push-pull transformer T2, and the anti-phase input drive is obtained via phase-splitting transformer T1. The essential features of this type of amplifier are that both transistors are cut off under quiescent conditions, that neither transistor conducts until its input drive signal exceeds its base-emitter 'knee' voltage, and that one transistor is driven on when the other is driven off, and vice versa. The circuit consumes near-zero quiescent current, and has high efficiency (up to 78.5%) under all operating conditions, but it generates severe cross-over distortion in the amplifier's output signal, as shown in Figure 3(b) . Aposta jogo de futebol 3 reais.Afinal, aqui vamos explicar como baixar o bwin Android apk e curtir uma das grandes casas de apostas do mercado .
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Figure 2. Examples of IGBT overcurrent protection techniques. Having detected the IGBT overcurrent, a further challenge is faced in turning off an IGBT at abnormally high current levels. In Russian folklore, limite de aposta mega sena online the Chuchuna is an entity said to dwell in Siberia. This is achieved by means of low driver impedance and small gate drive resistance. If the same gate turn-off rate is applied for overcurrent conditions, the di/dt in the collector-emitter will be significantly larger due to the higher current change in a short time period. Parasitic inductance within the collector-emitter circuit due to wire bond and PCB trace stray inductance can result in large overvoltage levels being reached transiently across the IGBT (as VL STRAY = L STRAY × di/dt). Thus, it is important to provide a higher impedance turn-off path when shutting the IGBT off during a desaturation event in order to reduce the di/dt and any potentially destructive overvoltage levels.

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